Impact of the wafer quality on the reliability of MOS structure on the C-face of 4H-SiC

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 783-786

  Hatakeyama, T ^a   Suzuki, T ^a   Senzaki, J ^b   Fukuda, K ^b   Matsuhata, H ^b   Shinohe, T ^a   Arai, K ^b  

^a R&D Association for Future Electron Devices   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Dislocation; Gate oxide; MOSFET; Reliability; Surface defect; TDDB

Indexed keywords

DEFECT DENSITY; ELECTRIC FIELDS; GATES (TRANSISTOR); MOSFET DEVICES; SILICON CARBIDE; SILICON WAFERS; SURFACE DEFECTS;

CONSTANT-CURRENT STRESS; DISLOCATION; DISLOCATIONS DENSITIES; GATE OXIDE; MOS STRUCTURE; MOS-FET; MOSFETS; TDDB; TYPICAL VALUES; WAFER QUALITY;

RELIABILITY;

EID: 63849154895     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.783     Document Type: Conference Paper

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