SCOPUS 정보 검색 플랫폼

Volumn 109, Issue 2, 2012, Pages 283-287

Effect of Ga doping concentration on the luminescence efficiency of GaN light-emitting diodes with Ga-doped ZnO contacts

(8) Kim, Chang Oh a Kim, Sung a Shin, Dong Hee a Shin, Dong Yeol a Choi, Suk Ho a Hwang, Sung Won b Cha, Nam Goo b Kang, Sammook b

a Kyung Hee University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CONTACTS; GA DOPING; GA-DOPED ZNO; GAN LIGHT-EMITTING DIODES; I - V CURVE; INJECTION CURRENTS; LUMINESCENCE EFFICIENCIES; NEAR BAND EDGE; P-N JUNCTION; RADIATIVE TRANSITIONS; RF-SPUTTERING; SAPPHIRE SUBSTRATES; XRD; YELLOW EMISSIONS;

DIODES; ELECTRIC CONTACTS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; X RAY DIFFRACTION; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84869497466 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-012-5129-z Document Type: Article

Times cited : (6)

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