Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 2 A, 2004, Pages

  Nakahara, Ken ^a   Tamura, Kentaro ^a   Sakai, Mitsuhiko ^a   Nakagawa, Daisuke ^a   Ito, Norikazu ^a   Sonobe, Masayuki ^a   Takasu, Hidemi ^a   Tampo, Hitoshi ^b   Fons, Paul ^b   Matsubara, Koji ^b   Iwata, Kakuya ^b   Yamada, Akimasa ^b   Niki, Shigeru ^b  

^a ROHM CO LTD   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

External efficiency; GaN; InGaN; LED; MBE; Ohmic contact; Reliability; Transparent; ZnO

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRODES; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTOR DOPING; ZINC OXIDE;

EXTERNAL EFFICIENCY; TRANSPARENT;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 11144354774     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l180     Document Type: Article

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