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Applied Physics Letters

Volumn 96, Issue 13, 2010, Pages

InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer

(8) Tu, S H a Lan, C J b Wang, S H c Lee, M L d Chang, K H b Lin, R M c Chang, J Y a Sheu, J K b

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

c CHANG GUNG UNIVERSITY (Taiwan)

d SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT LAYERS; DOPED ZNO; ELECTRODE PADS; EMITTED LIGHT; FLAT SURFACES; GA-DOPED ZNO; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; INJECTION CURRENTS; LIGHT OUTPUT POWER; METAL CONTACTS; OUTPUT POWER; P-TYPE;

ANGULAR DISTRIBUTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; MULTIPHOTON PROCESSES; ORGANIC LIGHT EMITTING DIODES (OLED); ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 77950481036 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3377872 Document Type: Article

Times cited : (22)

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