Scanning photocurrent microscopy in single nanowire devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8106, Issue , 2011, Pages

  Graham, Rion ^a   Miller, Chris ^a   Triplett, Mark ^a   Yu, Dong ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Charge transport; Colloidal nanocrystals; Metal insulator transition; Microscopy; Nanowires; Photocurrent; VO2

Indexed keywords

AS-GROWN; BANDBENDING; CHARGE TRANSPORT IN SEMICONDUCTORS; COLLOIDAL NANOCRYSTALS; DOMAIN BOUNDARY; LOCAL ELECTRIC FIELD; LOCAL ELECTRONIC STRUCTURES; METAL ELECTRODES; METAL INSULATORS; P-TYPE; PHOTORESPONSES; ROOM TEMPERATURE; SINGLE NANOWIRES; VO2;

CHARGE TRANSFER; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; MICROSCOPIC EXAMINATION; PHOTOCURRENTS; SEMICONDUCTOR DEVICES; VANADIUM COMPOUNDS;

NANOWIRES;

EID: 80053558510     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.899410     Document Type: Conference Paper

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