Improved electronic properties of laser-doped emitters by reducing surface roughness

Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

  Nishimura, Hideki ^a   Hirata, Kenji ^a   Hasegawa, Mitsuhiro ^a   Katagiri, Takuya ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR ATMOSPHERE; HIGH THROUGHPUT; LASER DOPING; LOW COSTS; MULTICRYSTALLINE SILICON (MC-SI); ROOM TEMPERATURE; SELECTIVE AREAS; SURFACE CONDITIONS; SURFACE ELECTRIC PROPERTIES; SURFACE ETCHING; VACUUM TREATMENT;

CONVERSION EFFICIENCY; ELECTRONIC PROPERTIES; LASERS; POLYSILICON; SURFACE ROUGHNESS;

ELECTRIC PROPERTIES;

EID: 84869131770     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.10NA15     Document Type: Article

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