Room-temperature luminescence and electron-beam-induced current (EBIC) recombination behaviour of crystal defects in multicrystalline silicon

Solar Energy Materials and Solar Cells

Volumn 72, Issue 1-4, 2002, Pages 465-472

  Kittler, M ^a   Seifert, W ^a   Arguirov, T ^b   Tarasov, I ^c   Ostapenko, S ^c  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

Band band luminescence; Crystal defects; D bands; EBIC; Photoluminescence; Recombination behaviour; SiPHER

Indexed keywords

BAND STRUCTURE; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; GRAIN BOUNDARIES; INDUCED CURRENTS; PHOTOLUMINESCENCE; SILICON SOLAR CELLS; THERMAL EFFECTS;

ELECTRON-BEAM-INDUCED CURRENTS (EBIC);

SILICON WAFERS;

EID: 0036533204     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(01)00194-5     Document Type: Conference Paper

References (17)