Analysis of minority carrier diffusion length in SiC toward high quality epitaxial growth

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 30-33

  Hatayama, T ^a   Yano, H ^a   Uraoka, Y ^a   Fuyuki, T ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

CVD; EBIC; Minority carrier diffusion length; SiC

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON BEAMS; EPITAXIAL GROWTH; HYDROGEN INORGANIC COMPOUNDS; SILICON CARBIDE;

EBIC; MINORITY CARRIER DIFFUSION LENGTH; OPTIMUM GROWTH WINDOW;

DIFFUSION;

EID: 30344431787     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.019     Document Type: Conference Paper

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