EBIC technique applied to polycrystalline silicon thin films: Minority carrier diffusion length improvement by hydrogenation

Thin Solid Films

Volumn 403-404, Issue , 2002, Pages 549-552

  Ballutaud, D ^a   Riviere A ^a   Rusu, M ^a   Bourdais, S ^a   Slaoui, A ^a  

^a CNRS   (France)

Author keywords

Diffusion; EBIC; Grain boundaries; Polycrystalline silicon

Indexed keywords

DEPOSITION; DIFFUSION; DOPING (ADDITIVES); ELECTRON BEAMS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HYDROGENATION; INDUCED CURRENTS; PASSIVATION; POLYSILICON; SILICON SOLAR CELLS;

ELECTRON BEAM INDUCED CURRENT (EBIC) TECHNIQUES;

THIN FILMS;

EID: 0036467889     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01652-2     Document Type: Conference Paper

References (15)