Realization of large-domain barium disilicide epitaxial thin film by introduction of miscut to Si(111) substrate

Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

  Hara, Kosuke O ^a,b   Usami, Noritaka ^a,b   Toh, Katsuaki ^c   Toko, Kaoru ^b,c   Suemasu, Takashi ^b,c  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISILICIDES; DOMAIN SIZE; DOMAIN STRUCTURE; ELECTRON BACK SCATTER DIFFRACTION; EPITAXIAL THIN FILMS; GROWTH STAGES; HIGH QUALITY; INPLANE ROTATION; LARGE DOMAIN; LATTICE MATCHING; MISCUT DIRECTION; ORIENTATION MAPS; SI(111) SUBSTRATE; STEP EDGE; VICINAL SUBSTRATES; X-RAY POLE FIGURE MEASUREMENT;

ATOMIC FORCE MICROSCOPY; BARIUM; EPITAXIAL FILMS; EPITAXIAL GROWTH; NUCLEATION; SILICON;

SUBSTRATES;

EID: 84869123154     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.10NB06     Document Type: Article

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