New barium-induced surface reconstructions on Si(111)

Surface Science

Volumn 355, Issue 1-3, 1996, Pages

  Weitering, H H ^a,b  

^a UNIVERSITY OF TENNESSEE   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Alkaline earth metals; Auger electron spectroscopy; Growth; Metal semiconductor interfaces; Oxidation; Silicon; Surface relaxation and reconstruction; Workfunction measurements

Indexed keywords

ALKALINE EARTH METALS; ANNEALING; AUGER ELECTRON SPECTROSCOPY; BARIUM COMPOUNDS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; MONOLAYERS; OXIDATION; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTOR METAL BOUNDARIES; SUPERSATURATION;

SURFACE RECONSTRUCTIONS; SURFACE RELAXATION; WORK FUNCTION MEASUREMENTS;

SURFACE PHENOMENA;

EID: 0030169133     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01348-2     Document Type: Article

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