Effect of N 2-gas flow rates on the structures and properties of copper nitride films prepared by reactive DC magnetron sputtering

Vacuum

Volumn 89, Issue 1, 2013, Pages 78-81

  Li, Xing'Ao ^a   Bai, Qiufei ^a   Yang, Jianping ^a   Li, Yongtao ^a   Wang, Lixia ^a   Wang, Haiyun ^a   Ren, Shanling ^a   Liu, Shengli ^a   Huang, Wei ^a  

^a NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Copper nitride thin film; DC magnetron sputtering; N 2 gas flow rates; Resistivity

Indexed keywords

COPPER NITRIDE; COPPER NITRIDE THIN FILMS; CRYSTALLINE ORIENTATIONS; DC MAGNETRON SPUTTERING; DC POWER; DEPOSITED FILMS; GLASS SUBSTRATES; HIGH QUALITY; NITRIFICATION RATES; PREFERENTIAL ORIENTATION; REACTIVE DC MAGNETRON SPUTTERING; SUBSTRATE TEMPERATURE; X-RAY DIFFRACTION MEASUREMENTS;

DEPOSITS; ELECTRIC CONDUCTIVITY; FLOW OF GASES; FLOW RATE; MAGNETRON SPUTTERING; METALLIC FILMS; MICROHARDNESS; SUBSTRATES; X RAY DIFFRACTION;

COPPER;

EID: 84869087887     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2011.10.020     Document Type: Conference Paper

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