Growth of stoichiometric Cu3N thin films by reactive magnetron sputtering

Journal of Crystal Growth

Volumn 295, Issue 1, 2006, Pages 79-83

  Ji, A L ^a   Huang, R ^a   Du, Y ^a   Li, C R ^a   Wang, Y Q ^a   Cao, Z X ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Thermal decomposition; A3. Reactive magnetron sputtering; B1. Copper nitride; B2. Deficit semiconductor

Indexed keywords

ANNEALING; COPPER COMPOUNDS; FILM GROWTH; MAGNETRON SPUTTERING; PRESSURE EFFECTS; PYROLYSIS; SEMICONDUCTOR MATERIALS; STOICHIOMETRY;

COPPER NITRIDE; DEFICIT SEMICONDUCTORS; REACTIVE MAGNETRON SPUTTERING; STOICHIOMETRIC SAMPLE;

THIN FILMS;

EID: 33748460075     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.07.007     Document Type: Article

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