Ti-doped copper nitride films deposited by cylindrical magnetron sputtering

Journal of Alloys and Compounds

Volumn 440, Issue 1-2, 2007, Pages 254-258

  Fan, X Y ^a   Wu, Z G ^a   Zhang, G A ^a   Li, C ^a   Geng, B S ^a   Li, H J ^a   Yan, P X ^a,b  

^a LANZHOU UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Copper nitride; Electrical resistivity; Optical band gap; Surface morphology

Indexed keywords

COPPER COMPOUNDS; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; OPTICAL BAND GAPS; SURFACE MORPHOLOGY; TITANIUM;

COPPER NITRIDE; GLASS SUBSTRATES; ROOM TEMPERATURE;

THIN FILMS;

EID: 34249687626     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2006.09.006     Document Type: Article

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