Shockley-haynes characterization of minority-carrier drift velocity, diffusion coefficient, and lifetime in HgCdTe avalanche photodiodes

Journal of Electronic Materials

Volumn 39, Issue 7, 2010, Pages 837-845

  Rothman, Johan ^a   Vojetta, G ^a   Moselle, B ^a   Mollard, L ^a   Gout, S ^a   Chamonal, J P ^a  

^a CEA LETI   (France)

Author keywords

Drift velocity; E APDs; HgCdTe; Lifetime; Mobility; MW; Response time jitter; Shockley Haynes; SW

Indexed keywords

ABSORBING LAYERS; AVALANCHE GAINS; CARRIER DRIFT VELOCITY; CONSTANT GAIN; CUTOFF WAVELENGTHS; DIFFUSION COEFFICIENTS; DIFFUSION MOBILITY; DRIFT MOBILITIES; DRIFT VELOCITIES; ELECTRON DIFFUSION COEFFICIENT; ELECTRON DRIFT MOBILITY; ELECTRON MULTIPLICATION; ELECTRON PROPERTIES; EXCESS NOISE FACTOR; FLUX MEASUREMENTS; GAIN PERFORMANCE; HEAVY HOLES; HGCDTE; IONIZED ACCEPTOR; N-TYPE MATERIALS; P-TYPE; READOUT INTEGRATED CIRCUITS; SATURATION VELOCITY; SHORT WAVES; TIME JITTERS;

ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; ELECTRONS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; HOT ELECTRONS; MERCURY COMPOUNDS; PHOTODIODES; TIMING JITTER; VELOCITY;

DIFFUSION;

EID: 77954621151     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1247-8     Document Type: Conference Paper

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