HgCdTe MWIR back-illuminated electron-initiated avalanche photodiode arrays

Journal of Electronic Materials

Volumn 36, Issue 8, 2007, Pages 1059-1067

  Reine, M B ^a   Marciniec, J W ^a   Wong, K K ^a   Parodos, T ^a   Mullarkey, J D ^a   Lamarre, P A ^a   Tobin, S P ^a   Gustavsen, K A ^a   Williams, G M ^b  

^a BAE SYSTEMS   (United States)

^b Voxtel Inc   (United States)

Author keywords

APD; Avalanche photodiode; HgCdTe; Infrared detector; Photodiode

Indexed keywords

CUTOFF WAVELENGTH; ILLUMINATED MODES; PHOTODIODE ARRAYS;

BIAS VOLTAGE; ELECTRONS; FILM GROWTH; INFRARED DETECTORS; LIGHTING; LIQUID PHASE EPITAXY; MERCURY COMPOUNDS;

AVALANCHE PHOTODIODES;

EID: 34548221000     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0172-y     Document Type: Conference Paper

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