Full-band monte carlo simulation of HgCdTe APDs

Journal of Electronic Materials

Volumn 39, Issue 7, 2010, Pages 912-917

  Bertazzi, Francesco ^a,b   Moresco, Michele ^a   Penna, Michele ^b   Goano, Michele ^b   Bellotti, Enrico ^a  

^a BOSTON UNIVERSITY   (United States)

^b POLITECNICO DI TORINO   (Italy)

Author keywords

Avalanche photodiodes (APDs); HgCdTe; Monte Carlo simulation

Indexed keywords

AB INITIO TECHNIQUES; ADJUSTABLE PARAMETERS; AVALANCHE PHOTODETECTORS; CARRIER MULTIPLICATION; CARRIER-PHONON SCATTERING; DEFORMATION POTENTIAL; DIELECTRIC FUNCTIONS; EXCESS NOISE; FULL-BAND MONTE CARLO; HGCDTE; LONG-WAVELENGTH INFRARED; MID-WAVELENGTH INFRARED; MONTE CARLO MODEL; MONTE CARLO SIMULATION; NOISE PROPERTIES; PHONON DISPERSIONS; PSEUDOPOTENTIAL CALCULATION; SINGLE CARRIER; WAVE VECTOR;

ACOUSTIC DISPERSION; AVALANCHE PHOTODIODES; COMPUTER SIMULATION; COSMIC RAY DETECTORS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; IMPACT IONIZATION; MERCURY COMPOUNDS; MONTE CARLO METHODS; OPTOELECTRONIC DEVICES; PHONON SCATTERING; PHONONS; PHOTODETECTORS; PHOTODIODES; QUANTUM THEORY; STRAIN MEASUREMENT;

INFRARED RADIATION;

EID: 77954623187     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1198-0     Document Type: Conference Paper

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