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Volumn 38, Issue 8, 2009, Pages 1790-1799

Study of the transit-time limitations of the impulse response in Mid-Wave infrared HgCdTe avalanche photodiodes

(8) Perrais, Gwladys a Derelle, Sophie b Mollard, Laurent a Chamonal, Jean Paul a Destefanis, Gerard a Vincent, Gilbert c Bernhardt, Sylvie b Rothman, Johan a

a CEA LETI (France)

b ONERA (France)

c CNRS (France)

Author keywords

APD; Bandwidth; HgCdTe; Impulse response; Monte Carlo simulation; Saturation; Velocity

Indexed keywords

APD; AVERAGE VELOCITY; DEPLETION LAYER; DETERMINISTIC MODELS; DIFFUSION CURRENTS; ELECTRON AVALANCHE PHOTODIODE; ELECTRON SATURATION VELOCITY; ELECTRONS AND HOLES; EXPONENTIAL GAIN; FALL TIME; GAIN-BANDWIDTH PRODUCTS; HGCDTE; HIGH GAIN; LIMITED BANDWIDTH; MAXIMUM VALUES; METALLIZATIONS; MIDWAVE INFRARED; MONTE CARLO SIMULATION; ONE-DIMENSIONAL; QUANTITATIVE ANALYSIS; REVERSE BIAS; RISETIMES; SATURATION; SERIES RESISTANCES; TRANSIT-TIME;

AVALANCHE PHOTODIODES; BANDWIDTH; CAPACITANCE; COMPUTER SIMULATION LANGUAGES; DIODES; ELECTRIC FIELDS; ELECTRONS; IMPACT IONIZATION; IMPULSE RESPONSE; MERCURY COMPOUNDS; PHOTODIODES; PHOTOEXCITATION; SIMULATORS; VELOCITY;

MONTE CARLO METHODS;

EID: 68749110563 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0802-7 Document Type: Conference Paper

Times cited : (57)

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