Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Applied Physics Letters

Volumn 101, Issue 16, 2012, Pages

  Choi, Suk ^a,e   Ji, Mi Hee ^a   Kim, Jeomoh ^a   Jin Kim, Hee ^a,f   Satter, Md M ^a   Yoder, P D ^a   Ryou, Jae Hyun ^a,b   Dupuis, Russell D ^a,c   Fischer, Alec M ^d   Ponce, Fernando A ^d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b University of Houston   (United States)

^c Georgia Institute of Technology   (United States)

^d ARIZONA STATE UNIVERSITY   (United States)

^e PALO ALTO RESEARCH CENTER   (United States)

^f Philips Lumileds Lighting Company   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BLUE LEDS; DOPING EFFICIENCY; EFFECTS OF STRAINS; ELECTRON BLOCKING LAYER; HIGH CURRENTS; HOLE INJECTION; HOLE-BLOCKING; III-NITRIDE; LATTICE-MATCHED; LIGHT OUTPUT POWER; PERFORMANCE CHARACTERISTICS; POTENTIAL BARRIERS;

EFFICIENCY; ELECTRON INJECTION; ELECTRONS; NITRIDES;

LIGHT EMITTING DIODES;

EID: 84867803665     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4759044     Document Type: Article

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