Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

Applied Physics Letters

Volumn 99, Issue 17, 2011, Pages

  Wang, C H ^a   Chang, S P ^a,b   Ku, P H ^a   Li, J C ^a   Lan, Y P ^a   Lin, C C ^a   Yang, H C ^b   Kuo, H C ^a   Lu, T C ^a   Wang, S C ^a   Chang, C Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; C-PLANE SAPPHIRE SUBSTRATES; HIGH CURRENT DENSITIES; HOLE TRANSPORTS; INGAN/GAN; MULTIPLE QUANTUM BARRIERS; SERIES RESISTANCES;

HOLE MOBILITY; LIGHT EMISSION; QUANTUM CHEMISTRY; SEMICONDUCTING ALUMINUM COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 80555140013     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3655903     Document Type: Article

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