Few-layer nanoplates of Bi2Se3 and Bi 2Te3 with highly tunable chemical potential

Nano Letters

Volumn 10, Issue 6, 2010, Pages 2245-2250

  Kong, Desheng ^a   Dang, Wenhui ^b   Cha, Judy J ^a   Li, Hui ^b   Meister, Stefan ^a   Peng, Hailin ^b   Liu, Zhongfan ^b   Cui, Yi ^a  

^a Stanford University   (United States)

^b PEKING UNIVERSITY   (China)

Author keywords

Bismuth selenide; Bismuth telluride; Nanoplate; Topological insulator

Indexed keywords

ATOMIC LAYER; BAND GAPS; BISMUTH SELENIDE; BISMUTH TELLURIDE; CATALYST-FREE; COVALENTLY BONDED; GROWTH MECHANISMS; HIGH-K DIELECTRIC; LAYERED STRUCTURES; LOW TEMPERATURES; METALLIC SURFACE; NANO-MATERIALS; NANO-PLATE; NANOPLATES; NANORIBBONS; NEW MEMBERS; OPTICAL IMAGE; OXIDIZED SILICON; PHOTOEMISSION SPECTROSCOPY; QUANTUM PHASE; SURFACE STATE EFFECT; SURFACE-TO-VOLUME RATIO; SYNTHESIS AND CHARACTERIZATION; THEORETICAL CALCULATIONS; TOP GATE; TRANSPORT MEASUREMENTS; ULTRA-THIN; VAN DER WAALS INTERACTIONS; VAPOR-SOLID;

BISMUTH; CARRIER CONCENTRATION; CHEMICAL POTENTIAL; CHEMICALS; CRYSTAL ATOMIC STRUCTURE; EMISSION SPECTROSCOPY; GEOMETRICAL OPTICS; SILICON COMPOUNDS; SILICON OXIDES; SOLID ELECTROLYTES; SURFACE PROPERTIES; TELLURIUM COMPOUNDS; TOPOLOGY; VAN DER WAALS FORCES;

NANOSTRUCTURES;

EID: 77953307023     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl101260j     Document Type: Article

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