High-mobility graphene nanoribbons prepared using polystyrene dip-pen nanolithography

Journal of the American Chemical Society

Volumn 133, Issue 15, 2011, Pages 5623-5625

  Shin, Yun Sok ^a   Son, Jong Yeog ^b   Jo, Moon Ho ^a   Shin, Young Han ^c   Jang, Hyun Myung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Kyung Hee University   (South Korea)

^c University of Ulsan   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMICALLY FLAT SURFACE; DIP-PEN NANOLITHOGRAPHY; ETCHING TECHNIQUE; GRAPHENE NANORIBBONS; HIGH MOBILITY; LARGE DIELECTRIC CONSTANT; NB-DOPED SRTIO; OPERATION VOLTAGE; ROOM TEMPERATURE; SRTIO;

FIELD EFFECT TRANSISTORS; GRAPHENE; MESFET DEVICES; NANOLITHOGRAPHY; POLYSTYRENES;

STRONTIUM ALLOYS;

GRAPHENE; NANORIBBON; POLYSTYRENE; SILICON DIOXIDE; STRONTIUM; TITANIUM DIOXIDE;

ARTICLE; DIELECTRIC CONSTANT; DIP PEN NANOLITHOGRAPHY; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTOR; NANOFABRICATION; ROOM TEMPERATURE;

EID: 79954471183     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja108464s     Document Type: Article

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