Evidence for strain-induced local conductance modulations in single-layer graphene on SiO 2

Nano Letters

Volumn 9, Issue 7, 2009, Pages 2542-2546

  Teague, M L ^a   Lai, A P ^a   Velasco, J ^b   Hughes, C R ^a   Beyer, A D ^a   Bockrath, M W ^a   Lau, C N ^b   Yeh, N C ^a  

^a California Institute of Technology   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TUNNELING; CONDUCTANCE MODULATIONS; DEVICE APPLICATION; DIRAC FERMIONS; DIRAC POINT; ELECTRONIC MATERIALS; GRAPHENE; LOW ENERGIES; OUT-OF-PLANE; PHONON MODE; SINGLE LAYER; SPATIAL MODULATIONS; STM STUDY; STRAIN MAPS; TUNNELING CONDUCTANCE; U-SHAPED;

ELECTRIC POTENTIAL; ELECTRON GAS; MODULATION; SCANNING TUNNELING MICROSCOPY; SILICON COMPOUNDS; SOUND REPRODUCTION;

WIND TUNNELS;

GRAPHITE; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRON; ELECTRONICS; GAS; MATERIALS TESTING; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY;

ELECTRIC CONDUCTIVITY; ELECTRONICS; ELECTRONS; GASES; GRAPHITE; MATERIALS TESTING; MICROSCOPY, ELECTRON, SCANNING; SILICON DIOXIDE; SURFACE PROPERTIES;

EID: 67650401073     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl9005657     Document Type: Article

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