Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Polyakov, A Y ^a   Jeon, Dae Woo ^b   Smirnov, N B ^a   Govorkov, A V ^a   Kozhukhova, E A ^a   Yakimov, E B ^c   Lee, In Hwan ^b  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b Chonbuk National University   (South Korea)

^c INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AQUA REGIA; BAND EDGE; BAND EDGE LUMINESCENCE; CONTROL SAMPLES; DEEP LEVELS TRANSIENT SPECTROSCOPY; DEEP TRAPS; GAN FILM; LUMINESCENCE EFFICIENCIES; LUMINESCENT PROPERTY; MICRO-CATHODOLUMINESCENCE; NANOPILLAR; NANOPILLAR STRUCTURES; NI NANOPARTICLES; RADIATION DEFECTS; SCHOTTKY DIODES; SURFACE CONTAMINATIONS; SURFACE LEAKAGE; TEMPERATURE ANNEALING;

DRY ETCHING; ELECTRON TRAPS; GALLIUM NITRIDE; NANOSTRUCTURES; SCHOTTKY BARRIER DIODES;

ELECTRIC PROPERTIES;

EID: 84867537044     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757942     Document Type: Article

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