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Applied Physics Letters

Volumn 101, Issue 14, 2012, Pages

Intrinsic threshold mechanism of phase-change memory cells by pulsed current-voltage characterization

(5) Chen, W a Li, Z a Peng, J H a Deng, Y F a Miao, X S a

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CURRENT-VOLTAGE CHARACTERIZATION; CURRENT-VOLTAGE MEASUREMENTS; DIRECT CURRENT; ELECTRONIC ACTIVITY; ENERGY ACCUMULATION; I - V CURVE; IV CHARACTERISTICS; MEMORY CELL; PCRAM CELLS; PHASE CHANGES; PHASE-CHANGE RANDOM ACCESS MEMORY; PHYSICAL MODEL; PULSEWIDTHS; SELF-HEATING; SHORT-PULSED;

PHYSICAL PROPERTIES; PHYSICS;

PHASE CHANGE MEMORY;

EID: 84867512109 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4757280 Document Type: Article

Times cited : (5)

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