Multiphysics modeling and impact of thermal boundary resistance in phase change memory devices

Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference

Volumn 2006, Issue , 2006, Pages 106-113

  Reifenberg, J ^a   Pop, E ^a   Gibby, A ^a   Wong, S ^a   Goodson, K ^a  

^a Stanford University   (United States)

Author keywords

GeSbTe; GST; PRAM; Simulation; Thermal interface resistance

Indexed keywords

PHASE CHANGE RANDOM ACCESS MEMORY (PRAM); PROGRAMMING CURRENT; THERMAL INTERFACE RESISTANCE; THERMAL TRANSPORT;

COMPUTATIONAL GEOMETRY; COMPUTER PROGRAMMING; COMPUTER SIMULATION; ELECTRIC CURRENTS; HEAT RESISTANCE; MATHEMATICAL MODELS; PHASE TRANSITIONS; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

RANDOM ACCESS STORAGE;

EID: 33845588234     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ITHERM.2006.1645329     Document Type: Conference Paper

References (14)

1. S. Lai, "Current Status of Phase Change Memory and Its Future," Proc. IEDM, p. 255, Dec. 2003.
2. H. Horii et al., "A novel cell technology using N-doped GeSbTe films for phase change RAM," Sym. on VLSI Tech., pp.177-178, 2003.
3. E. Pop, R. Dutton, K. Goodson, "Thermal analysis of ultrathin body device scaling," Proc. IEDM, pp. 883-886, Dec. 2003.
4. A. Pirovano, et al., "Electronic switching in phase change memories," IEEE Trans. Elec. Dev., vol. 51, no. 3, pp. 452-459, Mar. 2004.
5. A. Pirovano, et al., "Scaling analysis of phase-change memory technology," Proc. IEDM, pp. 29.6.1-29.6.4, Dec. 2003.
6. D. Ielmini, A. Lacaita, A. Pirovano, R. Bez, "Analysis of phase distribution in phase change nonvolatile memories," IEEE Elec. Dev. Let., vol. 25, no. 7, pp. 507-510, Jul. 2004.
7. D. Cahill et al., "Nanoscale thermal transport," J. Appl. Phys. v. 93, p. 793, 2003.
8. E.T. Swartz and R.O. Pohl, "Thermal boundary resistance," Rev. Mod. Phys., vol. 61, no. 3, pp. 605-668, 1989.
9. 2 interface," Appl. Phys. Lett. vol. 76, p. 3864, 2000.
10. C. Peng, M. Mansuripur, "Measurement of the Thermal Conductivity of Erasable Phase-Change Optical Recording Media," App. Opt., Vol. 39, 2000, pp. 2347-52.
11. Small, E., Reifenberg, J., Sadeghipour, S.M., and Asheghi, M. ASME Summer Heat Transfer Conf., HT-72330, July 17-22, San Francisco, CA, USA (2005).
12. 5 in optical and electrical memory devices," J. Appl. Phys., vol. 95 (2), p. 504, 2004.
13. D. Kashchiev, Surf. Sci., vol. 14, pp. 209-220, 1969.
14. K. F. Kelton and A. L. Greer, J. Non-Cryst. Solids, vol. 79, p. 295, 1986.