Study of Phase Change Random Access Memory (PCRAM) at the nano-scale

Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07

Volumn , Issue , 2007, Pages 36-39

  Zhao, R ^a   Shi, L P ^a   Wang, W J ^a   Yang, H X ^a   Lee, H K ^a   Lim, K G ^a   Yeo, E G ^a   Chua, E K ^a   Chong, T C ^a  

^a DATA STORAGE INSTITUTE   (Singapore)

Author keywords

Nano scale; Nonvolatile Memory (NVM); Phase Change RAM (PCRAM); Phase change speed

Indexed keywords

CELLS; CYTOLOGY; ELECTRON BEAM LITHOGRAPHY; NANOTECHNOLOGY; NONVOLATILE STORAGE; PHOTOLITHOGRAPHY; SPEED; TESTING;

ELECTRICAL TESTING; NANO SCALE; NON-VOLATILE MEMORY; PATTERNING PROCESS; PHASE CHANGE RAMS; PHASE CHANGE RANDOM ACCESS MEMORY (PCRAM); PHASE CHANGE SPEED; PROGRAMMING CURRENTS;

PHASE CHANGE MEMORY;

EID: 48549098121     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nvmt.2007.4389941     Document Type: Conference Paper

References (12)

1. S. Lai, "Current status of the phase change memory and its future", Tech. Dig. of IEDM, 2003
2. B. Roberto, and A. Pirovano, "Non-volatile memory technologies: emerging concepts and new materials", Material Science in Semiconductor Processing 7, 349-355 2004.
3. Y.N.Hwang, etc "Novel Cell Structure of PRAM with Thin Metal Layer inserted GeSbTe", IEDM 2003
4. N.Takaura, etc "A GeSbTe Phase Change Memory Cell Featuring a Tungsten Heater Electrodefor Low-Power, Highly Stable, and Short Read Cycle Operations", IEDM2003
5. Y.H.Ha, J.H.Yi, H.Horii, J.H.Park, S.H.Joo, S.O.Park, U-InChung, J.T.Moon "An Edge Contact Cell for Phase Change RAM Featuring Very Low Power Consumption" Samsung Electronics 2003 Symposium on VLSI Technology Digest of Technical Papers
6. M. J. Kang, et al. "Structural transformation of SbxSe100-x thin films for phase change nonvolatile memory applications", J. Appl. Phys. 98, 014904 (2005)
7. A. Pirovano, F. Pellizzer , A. Redaelli, I. Tortorelli , E. Varesi, F. Ottogalli, M. Tosi, P. Besana, R. Cecchini, R. Piva, M. Magistretti, M. Scaravaggi, G. Mazzone, P. Petruzza, F. Bedeschi, T. Marangon, A. Modelli, D. Ielmini, A. L. Lacaita, and R. Bez, "μTrench Phase-Change Memory Cell Engineering and Optimization", Proceedings of ESSDERC, 2005
8. C.W Jeong, S.J. Ahn, Y.N. Hwang, Y.J. Sog, J.H. Oh, S.Y. Lee, S.H. Lee, K. C. Ryoo, G.T. Jeong, H.S. Jeong, K. Kim and etc., "Highly Reliable Ring-Type Contact for High-Density Phase Change Memory", JJAP, Vol. 45, No. 4B, 2006, pp. 3233-3237
9. S. Lai and L. Tyler, "OUM - a 180 nm nonvolatile memory cell element technology for stand alone and embedded applications", Tech. Dig. Of IEDM, 803-805 2001.
10. C. Vieu, F. Carcenac, A. Pepin, Y. Chen, M. Mejias, A. Lebib, L. Manin-Ferlazzo, L. Couraud and H. Launois, "Electron beam lithography: resolution limits and applications" Appl. Surf. Sci. 164, 111-117 (2000).
11. W.J. Wang, R. Zhao, L.P. Shi, X.S. Miao, P.K. Tan, M.H. Hong, T.C. Chong, Y.H. Wu, & Y. Lin, "Nonvolatile phase change memory nanocell fabrication by femtosecond laser writing assisted with near-field optical microscopy" J. Appl. Phys. 98, 124313-124318 (2005).
12. W.J. Wang, L.P. Shi, R. Zhao, etc., manuscript submitted to APL.