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Volumn 24, Issue 11, 2009, Pages
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Theoretical analysis of the RESET operation in phase-change memories
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Author keywords
[No Author keywords available]
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Indexed keywords
CAP THICKNESS;
CELL ARRAY;
CELL RESISTANCE;
DEVICE PARAMETERS;
EXPERIMENTAL CHARACTERIZATION;
FABRICATION PROCESS;
IN-PHASE;
MULTILEVEL APPROACH;
MULTILEVEL PROGRAMMING;
NON-VOLATILE;
PROGRAMMING WINDOW;
RESET PULSE;
RESISTANCE DISTRIBUTION;
RESISTANCE LEVEL;
IMPACT RESISTANCE;
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EID: 70449916638
PISSN: 02681242
EISSN: 13616641
Source Type: Journal
DOI: 10.1088/0268-1242/24/11/115008 Document Type: Article |
Times cited : (13)
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References (11)
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