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Volumn 24, Issue 11, 2009, Pages

Theoretical analysis of the RESET operation in phase-change memories

Author keywords

[No Author keywords available]

Indexed keywords

CAP THICKNESS; CELL ARRAY; CELL RESISTANCE; DEVICE PARAMETERS; EXPERIMENTAL CHARACTERIZATION; FABRICATION PROCESS; IN-PHASE; MULTILEVEL APPROACH; MULTILEVEL PROGRAMMING; NON-VOLATILE; PROGRAMMING WINDOW; RESET PULSE; RESISTANCE DISTRIBUTION; RESISTANCE LEVEL;

EID: 70449916638     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/11/115008     Document Type: Article
Times cited : (13)

References (11)
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    • 5 nanopillar phase change memory devices
    • 5 nanopillar phase change memory devices J. Appl. Phys. 104 084507-7
    • (2008) J. Appl. Phys. , vol.104 , pp. 084507-084507
    • Ozatay, O.1
  • 3
    • 34047098348 scopus 로고    scopus 로고
    • Three-dimensional simulation model of switching dynamics in phase change random access memory cells
    • Kim D H et al 2008 Three-dimensional simulation model of switching dynamics in phase change random access memory cells J. Appl. Phys. 101 064512-1
    • (2008) J. Appl. Phys. , vol.101 , pp. 064512-064511
    • Kim, D.H.1
  • 4
    • 58149231291 scopus 로고    scopus 로고
    • A bipolar-selected phase change memory featuring multi-level cell storage
    • Bedeschi F et al 2009 A bipolar-selected phase change memory featuring multi-level cell storage IEEE J. Solid-State Circuits 44-1 217-27
    • (2009) IEEE J. Solid-State Circuits , vol.44 , pp. 217-227
    • Bedeschi, F.1
  • 6
    • 33751417319 scopus 로고    scopus 로고
    • Advanced ring type contact technology for high density phase change memory
    • Song Y et al 2005 Advanced ring type contact technology for high density phase change memory Proc. 35th European Solid-State Dev. Research Conf. pp 513-6
    • (2005) Proc. 35th European Solid-State Dev. Research Conf. , pp. 513-516
    • Song, Y.1
  • 8
    • 33749073379 scopus 로고    scopus 로고
    • A nano-scale-sized 3D element for phase change memories
    • Hangbing L et al 2005 A nano-scale-sized 3D element for phase change memories Semicond. Sci. Technol. 21-8 1013-7
    • (2005) Semicond. Sci. Technol. , vol.21 , Issue.8 , pp. 1013-1017
    • Hangbing, L.1
  • 11
    • 58049105326 scopus 로고    scopus 로고
    • An integrated multi-physics approach to the modeling of a phase-change memory device
    • Braga S et al 2008 An integrated multi-physics approach to the modeling of a phase-change memory device Proc. 38th European Solid-State Dev. Research Conf. pp 154-7
    • (2008) Proc. 38th European Solid-State Dev. Research Conf. , pp. 154-157
    • Braga, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.