Kapitza conductance of Bi/sapphire interface studied by depth- and time-resolved X-ray diffraction

Solid State Communications

Volumn 151, Issue 11, 2011, Pages 826-829

  Sheu, Y M ^a   Trigo, M ^b,c   Chien, Y J ^a   Uher, C ^a   Arms, D A ^d   Peterson, E R ^d   Walko, D A ^d   Landahl, E C ^e   Chen, J ^b,c   Ghimire, S ^b,c   Reis, D A ^b,c  

^a UNIVERSITY OF MICHIGAN   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c STANFORD UNIVERSITY   (United States)

^d ARGONNE NATIONAL LABORATORY   (United States)

^e DEPAUL UNIVERSITY   (United States)

Author keywords

A. Bismuth; D. Kapitza conductance; E. Ultrafast; E. X rays

Indexed keywords

A. BISMUTH; BI FILMS; E. ULTRAFAST; E. X-RAYS; HEAT TRANSPORT; KAPITZA CONDUCTANCE; NEAR SURFACE TEMPERATURE; THEORETICAL PREDICTION; TIME-RESOLVED X-RAY DIFFRACTION;

BISMUTH; DIFFRACTION; X RAY DIFFRACTION;

X RAYS;

EID: 79955597338     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.03.022     Document Type: Article

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