Discussion of enthalpy, entropy and free energy of formation of GaN

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3806-3810

  Jacob, K T ^a   Rajitha, G ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ENTHALPY; ENTROPY; FREE ENERGY; III-V SEMICONDUCTORS; SPECIFIC HEAT;

EQUILIBRIUM PARTIAL PRESSURE; EQUILIBRIUM TEMPERATURES; EXPERIMENTAL INVESTIGATIONS; EXPERIMENTAL TECHNIQUES; FREE ENERGY OF FORMATIONS; GIBBS ENERGY OF FORMATION; HEAT CAPACITY MEASUREMENTS; THERMODYNAMIC INFORMATION;

GALLIUM NITRIDE;

EID: 67649880515     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.05.016     Document Type: Note

References (14)

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