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Volumn , Issue , 2008, Pages 923-928

Analytical model for a tunnel field-effect transistor

Author keywords

Analytical model; BTBT; Kane; TFET; Transistor

Indexed keywords

TRANSISTORS; TUNNELS;

EID: 53249084407     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MELCON.2008.4618555     Document Type: Conference Paper
Times cited : (103)

References (10)
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    • Scaling the vertical tunnel fet with tunnel bandgap modulation and gate workfunction engineering
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    • K. K. Bhuwalka, J. Schulze, and I. Eisele, "Scaling the vertical tunnel fet with tunnel bandgap modulation and gate workfunction engineering," IEEE Transactions on Electron Devices, vol. 52, no. 5, May 2005.
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    • Low-subthreshold-swing tunnel transistors
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    • A. Qin Zhang; Wei Zhao; Seabaugh, "Low-subthreshold-swing tunnel transistors," Device Letters, IEEE, vol. 27, no. 4, pp. 297-300, April 2006.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.