Steady-state photoconductivity of amorphous In-Ga-Zn-O

Thin Solid Films

Volumn 518, Issue 11, 2010, Pages 3000-3003

  Lee, Dong Hee ^a   Kawamura, Ken ichi ^b   Nomura, Kenji ^b   Yanagi, Hiroshi ^a   Kamiya, Toshio ^a,b   Hirano, Masahiro ^b   Hosono, Hideo ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Amorphous oxide semiconductor; Mobility lifetime product; Photoresponse

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; DARK CONDUCTIVITY; HYDROGENATED AMORPHOUS SILICON; MOBILITY-LIFETIME PRODUCTS; PHOTOCONDUCTIVITY SPECTRUM; PHOTORESPONSES; STEADY-STATE PHOTOCONDUCTIVITY; SWEEP RATES; TIME CONSTANTS; TRANSIENT PHOTOCURRENTS;

ACTIVATION ANALYSIS; ACTIVATION ENERGY; PHOTOCONDUCTIVITY; ZINC;

AMORPHOUS SILICON;

EID: 77649131345     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.129     Document Type: Article

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