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Applied Physics Letters

Volumn 100, Issue 7, 2012, Pages

Determination of flat band voltage in thin film transistors: The case of amorphous-indium gallium zinc oxide

(3) Migliorato, Piero a,b Seok, Manju a Jang, Jin a

a Kyung Hee University (South Korea)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BULK EFFECT; CAPACITANCE VOLTAGE CHARACTERISTIC; COMBINED ANALYSIS; DENSITY OF STATE; DEVICE PARAMETERS; DEVICE VARIATIONS; FITTING PARAMETERS; FLAT BAND; FLAT-BAND VOLTAGE; INDIUM GALLIUM ZINC OXIDES; PHYSICAL MECHANISM;

PHYSICAL PROPERTIES; PHYSICS;

THIN FILM TRANSISTORS;

EID: 84857328937 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3685705 Document Type: Article

Times cited : (47)

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