Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current p-i-n solar cell applications

Journal of Applied Physics

Volumn 98, Issue 9, 2005, Pages

  Ptak, A J ^a   Friedman, D J ^a   Kurtz, Sarah ^a   Reedy, R C ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; BACKGROUND IMPURITIES; BAND GAPS; SUBSTRATE TEMPERATURE;

CONCENTRATION (PROCESS); IMPURITIES; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; SEMICONDUCTOR GROWTH; SOLAR CELLS; TEMPERATURE DISTRIBUTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 27844535422     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2113414     Document Type: Article

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