Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2007, Pages 52-54

  Wang, J ^a,b   Loh, W Y ^a   Zang, H ^a,b   Yu, M B ^a   Chua, K T ^a   Loh, T H ^a   Ye, J D ^a   Yang, R ^a   Wang, X L ^a   Lee, S J ^b   Cho, B J ^b   Lo, G Q ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED CMOS; COMPLIANT LAYER; GE PMOSFET; HIGH SPEED; MONOLITHIC INTEGRATION; RESPONSIVITY; SI SUBSTRATES; SI/SIGE; STRAINED-GE;

HOLE MOBILITY; MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONICS;

GERMANIUM;

EID: 78649892442     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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