Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 6, 2009, Pages 1086-1089

  Balbi, M ^a   Sorianello, V ^a   Colace, L ^a   Assanto, G ^a  

^a INFN SEZIONE DI ROMA   (Italy)

Author keywords

Germanium detectors; Near infrared; Optoelectronic devices; Photodiodes; Silicon optoelectronics

Indexed keywords

DEFECT DENSITY; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES; PHOTONS; SILICON DETECTORS; TEMPERATURE DISTRIBUTION;

CURRENT INCREASE; GERMANIUM DETECTOR; GERMANIUM ON SILICONS; NEAR INFRARED; P-I-N PHOTODETECTORS; SILICON OPTOELECTRONICS; SPACE CHARGE REGIONS; TEMPERATURE DEPENDENCE;

INFRARED DEVICES;

EID: 67349268459     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.08.015     Document Type: Article

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