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A new nano-electromechanical field effect transistor (NEMFET) design for low-power electronics
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IEEE International IEDM Technical Digest, Washington, DC, 2005
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Kam, H.1
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Resonant Gate Transistor
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A comprehensive model for PMOS NBTI degradation: Recent progress
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Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the e vs. 1/E controversy?
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SILC-based reassignment of trapping and trap generation regimes of positive bias temperature instability
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J. Q. Yang, M. Masuduzzman, J. F. Kang, and M. A. Alam, "SILC-based reassignment of trapping and trap generation regimes of positive bias temperature instability," in International Reliability Physics Symposium, 2011.
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International Reliability Physics Symposium, 2011
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0027662873
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Failure-mechanism models for creep and creep rupture
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Pull-In and Release Voltage Design for Nanoelectromechanical Field-Effect Transistors
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Anelastic Stress Relaxation in Gold Films and Its Impact on Restoring Forces in MEMS Devices
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X. Yan, W. Brown, Y. Li, J. Papapolymerou, C. Palego, J. Hwang, and R. Vinci, "Anelastic Stress Relaxation in Gold Films and Its Impact on Restoring Forces in MEMS Devices," Journal of Microelectromechanical Systems, vol. 18, pp. 570-576, Jun 2009.
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15
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0035695312
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Lifetime characterization of capacitive RF EMS switches
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A physics based predictive modeling framework for dielectric charging and creep in RF MEMS capacitive switches and varactors
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Strategies for dynamic soft-landing in capacitive microelectromechanical switches
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A soft-landing waveform for actuation of a single-pole single-throw ohmic RF MEMS switch
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