A robust AlGaN/GaN HEMT technology for RF switching applications

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2011, Pages

  Hodge, Michael D ^a,b   Vetury, Ramakrishna ^a   Shealy, Jeffrey ^a   Adams, Ryan ^b  

^a RF MICRO DEVICES   (United States)

^b University of North Carolina at Charlotte   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; CRITICAL VOLTAGES; GAN HEMTS; PIEZO-EFFECT; RELIABILITY FAILURE; RF SWITCHING;

GALLIUM ARSENIDE; GALLIUM NITRIDE; INTEGRATED CIRCUITS; INTEGRATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR SWITCHES; SILICON ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 81455143437     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2011.6062456     Document Type: Conference Paper

References (9)

1. J. Joh and J.A. del Alamo, "Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors," Electron Devices Meeting, 2006. IEDM '06. International, vol., no., pp.1-4, 11-13 Dec. 2006
2. J. Joh and J.A. del Alamo, "Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors," Electron Device Letters, IEEE, vol.29, no.4, pp.287-289, April 2008 (Pubitemid 351486760)
3. P. Makaram, J. Joh, J. A. del Alamo, T. Palacios, and C. V. Thompson, "Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors," Appl. Phys. Lett., 96, 233509 (2010)
4. H. Kim, V. Tilak, B. Green, J. Smart, W. Schaff, J. Shealy. and L. Eastman, "Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate," physica status solidi (a), vol. 188 pp. 203 - 206. (2001)
5. A. Sozza, C. Dua, E. Morvan, M.A. diForte-Poisson, S. Delage, F. Rampazzo, A. Tazzoli, F. Danesin, G. Meneghesso, E. Zanoni, A. Curutchet, N. Malbert, N. Labat, B. Grimbert, and J. De Jaeger, "Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress," Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International, pp.4 Dec. 2005
6. G. Meneghesso, G. Verzellesi, F. Danesin, F. Rampazzo, F. Zanon, A. Tazzoli, M. Meneghini, and E. Zanoni, "Reliability of GaN High- Electron-Mobility Transistors: State of the Art and Perspectives," IEEE Trans. on Device and Materials Reliability, vol.8, no.2, pp. 332-343 June 2008
7. International Microwave Symposium Workshop, "WFA: The Expanding Role GaN in RF Systems" May 28, 2010.
8. B. Christiansen, R. Coutu, R. Vetury, J. Shealy "Reliability Testing of AlGaN/GaN HEMTs under Multiple Stressors," International Reliability Physics Symposium., April 10, 2011.
9. R. Vetury, M. Hodge, D. Aichele, J. Shealy "Record High Power (> 100W) Wideband GaN RF Switch Technology," International Conference on Nitride Semiconductors, July 10, 2011.