Controlled axial and radial Te-doping of GaAs nanowires

Journal of Applied Physics

Volumn 112, Issue 5, 2012, Pages

  Salehzadeh, O ^a   Kavanagh, K L ^a   Watkins, S P ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY CONCENTRATION; AU NANOPARTICLE; BARRIER PROPERTIES; CONTACT BARRIER HEIGHT; CORE/SHELL; ELECTRICAL MEASUREMENT; ELECTRON CONCENTRATION; GAAS; GAAS SUBSTRATES; GROWTH PROCESS; METAL-ORGANIC VAPOR PHASE EPITAXY; PRECURSOR FLOW; SCANNING ELECTRON MICROSCOPE; SPACE-CHARGE-LIMITED; TE DOPING; VAPOR-LIQUID-SOLID MECHANISM;

ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; GOLD; METALLORGANIC VAPOR PHASE EPITAXY; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; TELLURIUM; TELLURIUM COMPOUNDS; TUNGSTEN; VAPORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84866426380     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4751988     Document Type: Conference Paper

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