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Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

Rectifying characteristics of Te-doped GaAs nanowires

(4) Salehzadeh, O a Chen, M X a Kavanagh, K L a Watkins, S P a

a SIMON FRASER UNIVERSITY (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CROSS SECTIONAL AREA; ELECTRICAL MEASUREMENT; GAAS; GOLD NANOPARTICLES; I - V CURVE; IDEALITY FACTORS; RECTIFYING CHARACTERISTICS; SURFACE DEPLETION; VAPOR-LIQUID-SOLID MECHANISM;

CARRIER CONCENTRATION; DISTILLATION; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM ARSENIDE; NANOWIRES; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM;

ELECTRIC WIRE;

EID: 80855140756 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3658633 Document Type: Article

Times cited : (32)

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