Control of GaAs nanowire morphology by group III precursor chemistry

Journal of Crystal Growth

Volumn 325, Issue 1, 2011, Pages 5-9

  Salehzadeh, O ^a   Watkins, S P ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

A1. Nanostructures; A1. Surface processes; A2. Crystal morphology; A3. Metalorganic vapor phase epitaxy; B1. Gallium compounds; B2. Semiconducting IIIV materials

Indexed keywords

A1. NANOSTRUCTURES; A1. SURFACE PROCESSES; A2. CRYSTAL MORPHOLOGY; B1. GALLIUM COMPOUNDS; METAL-ORGANIC VAPOR PHASE EPITAXY; SEMI CONDUCTING III-V MATERIALS;

CRYSTALS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NANOWIRES; REACTION RATES; SEMICONDUCTING GALLIUM; SURFACE REACTIONS; VAPORS;

GROWTH KINETICS;

EID: 79958719725     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.04.039     Document Type: Article

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