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Volumn 2, Issue 3, 2012, Pages
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Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures
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Author keywords
[No Author keywords available]
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Indexed keywords
IONIZATION;
OXIDE SEMICONDUCTORS;
THIN FILM CIRCUITS;
THIN FILMS;
AMORPHOUS OXIDE SEMICONDUCTOR (AOS);
BOTTOM GATE;
INDUCED CHARGES;
IONIZED DONORS;
TOP GATE;
THIN FILM TRANSISTORS;
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EID: 84866341849
PISSN: None
EISSN: 21583226
Source Type: Journal
DOI: 10.1063/1.4742853 Document Type: Article |
Times cited : (12)
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References (19)
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