Influence of annealing on the physical properties of filtered vacuum arc deposited tin oxide thin films

Journal of Non-Crystalline Solids

Volumn 353, Issue 26, 2007, Pages 2595-2602

  Cetinorgu E ^a,b   Goldsmith, S ^a   Rosenberg, Yu ^a   Boxman, R L ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b CUKUROVA UNIVERSITY   (Turkey)

Author keywords

Absorption; Atomic force and scanning tunneling microscopy; Ellipsometry; II VI Semiconductors; Optical properties; Plasma deposition; Tin oxide; X ray diffraction

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; FUSED SILICA; OPTICAL PROPERTIES; PLASMA DEPOSITION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; TIN OXIDES; X RAY DIFFRACTION ANALYSIS;

FILM SURFACE; FILTERED VACUUM ARC DEPOSITION (FVAD); UV FUSED SILICA (UVFS);

THIN FILMS;

EID: 34250739955     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.04.031     Document Type: Article

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