Metal-insulator transition in SrTiO3-x thin films induced by frozen-out carriers

Physical Review Letters

Volumn 107, Issue 14, 2011, Pages

  Liu, Z Q ^a   Leusink, D P ^a,b   Wang, X ^a   Lu W M ^a   Gopinadhan, K ^a   Annadi, A ^a   Zhao, Y L ^a   Huang, X H ^a   Zeng, S W ^a   Huang, Z ^a   Srivastava, A ^a   Dhar, S ^a   Venkatesan, T ^a   Ariando, ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

FREEZE OUT; FROZEN STATE; LOW TEMPERATURES; MAGNETO TRANSPORT PROPERTIES; OXYGEN DEFICIENT; PULSED-LASER DEPOSITION TECHNIQUE; SRTIO;

ELECTRIC PROPERTIES; MAGNETIC FIELDS; METAL INSULATOR BOUNDARIES; OXYGEN; OXYGEN VACANCIES; PULSED LASER DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; STRONTIUM ALLOYS; THIN FILMS; VAPOR DEPOSITION;

METAL INSULATOR TRANSITION;

EID: 80053327873     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.107.146802     Document Type: Article

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