Erratum: Creation of a two-dimensional electron gas at an oxide interface on silicon (Nature Communications (2010) 1 (94) DOI: 10.1038/ncomms1096);Creation of a two-dimensional electron gas at an oxide interface on silicon

Nature Communications

Volumn 1, Issue 7, 2010, Pages

  Park, J W ^a   Bogorin, D F ^b   Cen, C ^b   Felker, D A ^a   Zhang, Y ^c   Nelson, C T ^c   Bark, C W ^a   Folkman, C M ^a   Pan, X Q ^c   Rzchowski, M S ^a   Levy, J ^b   Eom, C B ^a  

^a University of Wisconsin Madison   (United States)

^b UNIVERSITY OF PITTSBURGH   (United States)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LANTHANUM; LANTHANUM ALUMINATE; NANOWIRE; OXIDE; SILICON; STRONTIUM; STRONTIUM TITANATE; UNCLASSIFIED DRUG;

ARTICLE; ATOMIC FORCE MICROSCOPY; CONDUCTANCE; ELECTRON; MOLECULAR ELECTRONICS; NANOANALYSIS; ROOM TEMPERATURE; SEMICONDUCTOR; SURFACE PROPERTY; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL ELECTRON GAS;

EID: 78149453292     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms2455     Document Type: Erratum

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