The 3-D stacking bipolar RRAM for high density

IEEE Transactions on Nanotechnology

Volumn 11, Issue 5, 2012, Pages 948-956

  Chen, Yi Chung ^a   Li, Hai Helen ^b   Zhang, Wei ^c   Pino, Robinson E ^c  

^a POLYTECHNIC UNIVERSITY   (United States)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c ICF INTERNATIONAL   (United States)

Author keywords

3 D stacking; Bipolar operation; crossbar; resistive memory; resistive random access memory (RRAM)

Indexed keywords

3-D STACKING; BIPOLAR OPERATION; CROSSBAR; RESISTIVE MEMORIES; RESISTIVE RANDOM ACCESS MEMORY;

STRUCTURES (BUILT OBJECTS); THREE DIMENSIONAL;

RANDOM ACCESS STORAGE;

EID: 84866125980     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2012.2208759     Document Type: Article

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