Nano-crossbar arrays for nonvolatile resistive RAM (RRAM) applications

2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Volumn , Issue , 2008, Pages 464-467

  Nauenheim, C ^a   Kugeler C ^a   Rudiger A ^a   Waser, R ^a   Flocke, A ^b   Noll, T G ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

NANOTECHNOLOGY;

CROSSBAR ARRAYS; FEATURE SIZES; HIGH DENSITIES; KEY COMPONENTS; NON VOLATILES;

RANDOM ACCESS STORAGE;

EID: 55349143194     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2008.141     Document Type: Conference Paper

References (6)

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2. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, "Reproducible switching effect in thin oxide films for memory applications," Appl. Phys. Lett., vol. 7, pp. 139-141, 2001.
3. R. Waser, and M. Aono, "Nanoionics-based resistive switching memories," Nature Materials, vol. 6, pp. 833-840, 2007.
4. J. Mustafa, and R. Waser, "A Novel Reference Scheme for Reading Passive Resistive Crossbar Memories," IEEE Trans. Nanotechn., vol. 5, pp. 687-691, 2006.
5. A. Flocke, and T. G. Noll, "Fundamental Analysis of Resistive Nano-Crossbars for the Use in Hybrid Nano/CMOS-Memory," in 33rd European Solid-State Circuits Conference, Munich 2007, pp. 328-331.
6. 2 thin films showing resistive switching," Appl. Phys. Lett., vol. 89, pp. 2909-1-3, 2006.