Reactive sputtering of ZnO:Al thin films from rotatable dual metallic targets

Applied Surface Science

Volumn 259, Issue , 2012, Pages 582-589

  Zhu, H ^a   Hupkes J ^a   Bunte, E ^a   Huang, S M ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b China   (China)

Author keywords

Oxygen partial pressure; PEM intensity; Reactive sputtering; ZnO:Al thin film

Indexed keywords

ALUMINUM OXIDE; DEPOSITION RATES; ETCHING; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; OXYGEN; PARTIAL PRESSURE; REACTIVE SPUTTERING; SURFACE STRUCTURE; THIN FILM SOLAR CELLS; TRANSPARENT CONDUCTING OXIDES; ZINC OXIDE;

ALUMINUM DOPED ZINC OXIDES (ZNO:AL); ELECTRICAL AND OPTICAL PROPERTIES; OXYGEN PARTIAL PRESSURE; PEM INTENSITY; PLASMA EMISSION MONITORING; SILICON THIN-FILM SOLAR CELLS; TWO-STEP ETCHING METHOD; ZNO:AL THIN FILMS;

THIN FILMS;

EID: 84866018884     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.07.080     Document Type: Article

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