Influence of working pressure on ZnO:Al films from tube targets for silicon thin film solar cells

Thin Solid Films

Volumn 518, Issue 17, 2010, Pages 4997-5002

  Zhu, H ^a   Hupkes J ^b   Bunte, E ^b   Gerber, A ^b   Huang, S M ^a  

^a East China Normal University   (China)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Magnetron sputtering; Thin film silicon solar cells; ZnO:Al films

Indexed keywords

ALUMINUM DOPED ZINC OXIDE FILMS; CERAMIC TARGET; CHEMICAL ETCHING; FEATURE SIZES; HIGH MOBILITY; MID-FREQUENCY; OPTICAL TRANSMISSIONS; SILICON THIN FILM; SILICON-BASED THIN FILMS; SPUTTER PRESSURE; SURFACE TEXTURES; TANDEM SOLAR CELLS; THIN FILM SILICON SOLAR CELLS; VISIBLE SPECTRA; WORKING PRESSURES; ZNO; ZNO:AL FILMS; ZNO:AL THIN FILMS;

ALUMINUM; CONVERSION EFFICIENCY; ELECTRIC PROPERTIES; ENERGY CONVERSION; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS; SOLAR CELLS; SOLAR ENERGY; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 77955665771     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.02.065     Document Type: Article

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