Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

Applied Physics Letters

Volumn 101, Issue 9, 2012, Pages

  Fontsere A ^a   Perez Tomas A ^a   Placidi, M ^a   Llobet, J ^a   Baron, N ^b,c   Chenot, S ^b   Cordier, Y ^b   Moreno, J C ^b   Iglesias, V ^d   Porti, M ^d   Bayerl, A ^d   Lanza, M ^d   Nafria M ^d  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b CRHEA CNRS   (France)

^c Pl M Rebuffat ^*  (France)

^d ETSE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CONDUCTION MECHANISM; CONDUCTIVE ATOMIC FORCE MICROSCOPY; GATE CURRENT; GATE-LEAKAGE CURRENT; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); NANO SCALE; SILICON HETEROJUNCTIONS; TRAP ASSISTED TUNNELING;

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HETEROJUNCTIONS; NANOTECHNOLOGY; SURFACE TOPOGRAPHY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84865840118     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4748115     Document Type: Article

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